Future navy application of wide bandgap power semiconductor devices

Author

Ericsen, Terry

Author_Institution

Office of Naval Res., Arlington, VA, USA

Volume

90

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1077

Lastpage

1082

Abstract

An assessment of future U.S. Navy electrical power requirements is presented to identify wide bandgap power device application opportunities, issues, and challenges. An emphasis is placed on blocking voltage and the potential of wide bandgap power semiconductor devices to enable higher voltage machines that can meet the U.S. Navy´s future electrical power challenges. Estimates of the blocking voltage and power requirements are made for various power systems envisioned for future shipboard application. Blocking voltage estimates are made using a simplified stress level analysis to illustrate the basic concepts underlying power semiconductor device application in U.S. Navy shipboard systems.

Keywords

naval engineering; power semiconductor devices; wide band gap semiconductors; U.S. Navy; blocking voltage; electrical power requirements; higher voltage machines; power semiconductor devices; shipboard application; shipboard systems; stress level analysis; wide bandgap semiconductor devices; Capacitors; Inductors; Marine vehicles; Photonic band gap; Power semiconductor devices; Semiconductor materials; Silicon carbide; Stress; Transformers; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2002.1021572

Filename

1021572