Title :
The Recovered Charge Characteristics of High Power Thyristors
Author :
Matteson, Frederick M. ; Ruhl, Harold J., Jr. ; Shafer, Peter O. ; Wolley, E.Duane
Author_Institution :
Semiconductor Products Department, General Electric Company, Auburn, NY 13021.
fDate :
5/1/1976 12:00:00 AM
Abstract :
The recovery characteristics of high power thyristors and diodes becomes increasingly important to the circuit designer as devices are made larger and faster. This paper considers various types of recovery as well as some important circuit influences on the recovery characteristics of power devices. Low and high frequency device data are presented for a number of different circuit conditions. The effects of spreading velocity, peak current during conduction, conduction pulsewidth, and commutating di/dt are considered. A new method for recovered charge data presentation is shown and some practical test circuit design considerations are discussed.
Keywords :
Circuit testing; Current measurement; Industry Applications Society; Probes; Pulse circuits; RLC circuits; Semiconductor device testing; Space vector pulse width modulation; Thyristors; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.1976.349448