DocumentCode :
79388
Title :
A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
Author :
An Chen
Author_Institution :
GLOBALFOUNDRIES, Sunnyvale, CA, USA
Volume :
60
Issue :
4
fYear :
2013
fDate :
Apr-13
Firstpage :
1318
Lastpage :
1326
Abstract :
This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.
Keywords :
matrix algebra; random-access storage; semiconductor diodes; statistical analysis; comprehensive crossbar array model; current degradation; diode; line resistance; matrix algebra; memory select devices; nonlinear device characteristics; nonlinear select devices; reading operation; sensing margin; statistical analysis; voltage degradation; voltage window; writing operation; Arrays; Junctions; Matrices; Resistance; Resistors; Sensors; Writing; Crossbar array; line resistance; memory; nonlinearity; select devices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2246791
Filename :
6473873
Link To Document :
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