• DocumentCode
    79388
  • Title

    A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

  • Author

    An Chen

  • Author_Institution
    GLOBALFOUNDRIES, Sunnyvale, CA, USA
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    1318
  • Lastpage
    1326
  • Abstract
    This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.
  • Keywords
    matrix algebra; random-access storage; semiconductor diodes; statistical analysis; comprehensive crossbar array model; current degradation; diode; line resistance; matrix algebra; memory select devices; nonlinear device characteristics; nonlinear select devices; reading operation; sensing margin; statistical analysis; voltage degradation; voltage window; writing operation; Arrays; Junctions; Matrices; Resistance; Resistors; Sensors; Writing; Crossbar array; line resistance; memory; nonlinearity; select devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2246791
  • Filename
    6473873