DocumentCode
793903
Title
Raman amplification characteristics at 850 nm in a silica-based photonic crystal fiber
Author
Nakajima, Kazuhide ; Fukai, Chisato ; Kurokawa, Kenji ; Tajima, Katsusuke ; Matsui, Takashi ; Sankawa, Izumi
Author_Institution
NTT Access Network Service Syst. Labs., NTT Corp., Ibaraki
Volume
18
Issue
3
fYear
2006
Firstpage
451
Lastpage
453
Abstract
We achieve a 2.5-dB improvement in the power penalty in a 10-Gb/s-based distributed Raman amplification transmission at 850 nm using a silica-based low-loss photonic crystal fiber (PCF). The experimental results agree well with a signal-to-noise ratio improvement model. The model indicates the negligible influence of double Rayleigh backscattering in the fabricated PCF
Keywords
Raman spectra; Rayleigh scattering; optical fibre communication; photonic crystals; silicon compounds; 10 Gbit/s; 850 nm; PCF; SiO2; distributed Raman amplification; double Rayleigh backscattering; silica-based photonic crystal fiber; Backscatter; Delay effects; Optical attenuators; Optical fiber communication; Optical pulses; Photonic crystal fibers; Pulse measurements; Signal to noise ratio; Silicon compounds; Stimulated emission; Distributed Raman amplification (DRA); double Rayleigh backscattering (DBR); photonic crystal fiber (PCF); signal-to-noise ratio (SNR);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2005.863176
Filename
1576835
Link To Document