Effect of gallium oxide on crystallization and thermal expansion behavior of low k glass composite

Author

Jean, Jau-Ho ; Gupta, Tapan K.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

18

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

438

Lastpage

443

Abstract

Cristobalite is formed when borosilicate glass (Corning Code 7740) is sintered at temperatures ranging from 700°C to 1000°C. With added gallium oxide content greater than a critical value, the cristobalite formation in the borosilicate glass is completely prevented at the sintering temperatures investigated, and the critical gallium oxide content increases with decreasing sintering temperature. The above result, similar to that observed in Al₂O₃/borosilicate glass system, is attributed to a strong coupling between Ga⁺³ from Ga₂O₃ and Na⁺ from borosilicate glass. The observed coupling reaction causes segregation of Na⁺ in borosilicate glass to gallium oxide, thus forming a Na⁺ and Ga⁺³-rich reaction layer around gallium oxide particles at a rate which prevents formation of cristobalite

Keywords

borosilicate glasses; ceramics; composite materials; crystallisation; integrated circuit packaging; sintering; thermal expansion; 700 to 1000 C; B2O3-SiO2-Ga2O3; BSG-Ga₂O₃; Corning Code 7740; Ga; Ga₂O₃; Ga⁺³; Na; Na⁺; borosilicate glass; coupling reaction; cristobalite; crystallization; low k glass composite; sintering temperatures; thermal expansion behavior; Ceramics; Crystalline materials; Crystallization; Dielectric substrates; Glass; Inhibitors; Packaging; Temperature; Thermal expansion; Thermal resistance;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.390329

Filename

390329