DocumentCode :
793909
Title :
Effect of gallium oxide on crystallization and thermal expansion behavior of low k glass composite
Author :
Jean, Jau-Ho ; Gupta, Tapan K.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
18
Issue :
2
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
438
Lastpage :
443
Abstract :
Cristobalite is formed when borosilicate glass (Corning Code 7740) is sintered at temperatures ranging from 700°C to 1000°C. With added gallium oxide content greater than a critical value, the cristobalite formation in the borosilicate glass is completely prevented at the sintering temperatures investigated, and the critical gallium oxide content increases with decreasing sintering temperature. The above result, similar to that observed in Al2O3/borosilicate glass system, is attributed to a strong coupling between Ga+3 from Ga2O3 and Na+ from borosilicate glass. The observed coupling reaction causes segregation of Na+ in borosilicate glass to gallium oxide, thus forming a Na+ and Ga+3-rich reaction layer around gallium oxide particles at a rate which prevents formation of cristobalite
Keywords :
borosilicate glasses; ceramics; composite materials; crystallisation; integrated circuit packaging; sintering; thermal expansion; 700 to 1000 C; B2O3-SiO2-Ga2O3; BSG-Ga2O3; Corning Code 7740; Ga; Ga2O3; Ga+3; Na; Na+; borosilicate glass; coupling reaction; cristobalite; crystallization; low k glass composite; sintering temperatures; thermal expansion behavior; Ceramics; Crystalline materials; Crystallization; Dielectric substrates; Glass; Inhibitors; Packaging; Temperature; Thermal expansion; Thermal resistance;
fLanguage :
English
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9886
Type :
jour
DOI :
10.1109/95.390329
Filename :
390329
Link To Document :
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