Pulse Operation of a Floating-Electrode Memristive Device

Author

Yuhong Kang ; Verma, Manish ; Tong Liu ; Orlowski, M.K.

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

60

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

1476

Lastpage

1479

Abstract

A resistive device with a floating electrode is manufactured as a stack of layers Cu/TaOx/Pt/TaOx/Cu in a crossbar array comprising two single resistive switches antiserially merged at the common inert floating electrode. The device exhibits four states, namely, HRS/HRS, HRS/LRS, LRS/HRS, and LRS/LRS, where HRS and LRS are the high- and low-resistance states of a single switch. During transitions between the states, the lifetime of the LRS/LRS state can be rendered very short. This property lends itself to generation of current/voltage pulses that can be controlled by three independent technology parameters.

Keywords

copper; electrodes; memristors; platinum; tantalum compounds; Cu-TaO-Pt-TaO-Cu; HRS-HRS; HRS-LRS; LRS-HRS; LRS-LRS; crossbar array; current-voltage pulse generation; floating-electrode memristive device; high-resistance states; independent technology parameters; low-resistance states; pulse operation; single resistive switches; Arrays; Bridge circuits; Electrodes; Heating; Programming; Switches; Threshold voltage; Conductive filament (CF); pulses; resistive switching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2243838

Filename

6473875