Title :
Magneto-impedance in sputtered amorphous films for micro magnetic sensor
Author :
Uchiyama, T. ; Mohri, K. ; Panina, L.V. ; Furuno, K.
Author_Institution :
Nagoya Univ., Japan
fDate :
11/1/1995 12:00:00 AM
Abstract :
The magneto-impedance (MI) effect in RF sputtered (CoFe)80 B20 zero-magnetostrictive amorphous films are presented. The relation between annealing conditions and MI characteristics was investigated. Impedance Z monotonously decreased with increasing applied field Hex when a high frequency sinusoidal current was applied to the sample annealed in a rotational field. In case of the samples having transverse anisotropy, Z sharply increases with Hex for the region Hex<Hk (anisotropy field). MI ratio (Δ|Zl/lZ0l/Oe) of 8%/Oe was obtained for the sample annealed in a dc field (or applying dc current) after annealing in the rotational field. The Colpitts oscillator type field sensor was constructed using the film element. A direction sensing utilizing the terrestrial field was carried out using the MI-colpitts sensor
Keywords :
amorphous magnetic materials; annealing; boron alloys; cobalt alloys; iron alloys; magnetic anisotropy; magnetic sensors; magnetic thin film devices; magnetoresistive devices; microsensors; sputtered coatings; (CoFe)80B20; Colpitts oscillator; DC field; RF sputtered amorphous films; annealing; direction sensing; magneto-impedance; micro magnetic sensor; rotational field; transverse anisotropy; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Annealing; Impedance; Magnetic anisotropy; Magnetic films; Oscillators; Perpendicular magnetic anisotropy; Radio frequency;
Journal_Title :
Magnetics, IEEE Transactions on
