DocumentCode :
79407
Title :
A \\mu -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays
Author :
Berdan, Radu ; Serb, Alexander ; Khiat, Ali ; Regoutz, Anna ; Papavassiliou, Christos ; Prodromakis, Themis
Author_Institution :
Dept. of Electr. & Electron. Eng. Circuits & Syst. Group, Imperial Coll. London, London, UK
Volume :
62
Issue :
7
fYear :
2015
fDate :
Jul-15
Firstpage :
2190
Lastpage :
2196
Abstract :
Selectorless crossbar arrays of resistive randomaccess memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform´s limitations have been quantified using large-scale nonideal crossbar simulations.
Keywords :
circuit testing; electric resistance measurement; electronics packaging; memristors; resistive RAM; μ-controller-based system; calibration; cross-point analog resistance measurement; custom-made discrete resistive crossbar array; interfacing selectorless RRAM crossbar array; large-scale nonideal crossbar simulation; mCAT instrument; memristor; memristor characterization and testing instrument; resistance 1 kohm to 1 Mohm; resistive random access memory; solid-state RRAM array; Current measurement; Electrical resistance measurement; Measurement uncertainty; Memristors; Resistance; Voltage measurement; Crossbars; memristors; resistive random-access memory (RRAM); sneak paths; sneak paths.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2433676
Filename :
7113814
Link To Document :
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