Title :
Simulation of sub-micron GMR memory cells
Author :
Beech, R.S. ; Pohm, A.V. ; Daughton, J.M.
Author_Institution :
Nonvolatile Electron. Inc., Eden Prairie, MN, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
A program has been developed for simulating submicron GMR memory cells. The simulation program is based on a two dimensional micro-magnetic equation; exchange forces, important at these dimensions, are included in the calculations. Simulation results are used to estimate the resistance change and required switching fields for 0.2 μm by 0.7 μm memory cells. The calculated values, ΔR of 0.028 Ω and word field of 1500 Oe for switching, closely approximate the measured values of 0.015 Ω to 0.03 Ω and about 1700 Oe
Keywords :
digital simulation; electronic engineering computing; exchange interactions (electron); giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetisation; magnetoresistive devices; 0.2 mum; 0.7 mum; CoFe-Cu-NiFeCo; exchange forces; resistance change; simulation program; submicron GMR memory cells; switching fields; top layer magnetization; two dimensional micromagnetic equation; word field; Demagnetization; Equations; Giant magnetoresistance; Magnetic fields; Magnetic materials; Magnetic memory; Magnetic separation; Magnetic switching; Saturation magnetization; Switches;
Journal_Title :
Magnetics, IEEE Transactions on
