Transient Radiation Current Generator Model for Semiconductor Devices

Mathematical models of devices can generally be classified into one of two categories. The first model ip formulated on physical properties of the device through a series of complex equations dependent upon doping levels fabricating Processes, and geometry. The second model is formulated on the basis of an equivalent electrical circuit which simulates the observable electrical behavior. The improved mathematical model for describing the photogenerated current in a radiated p-n junction described here falls into the second category. and is intended for use in the Transient Radiation Analysis by Computer (TRAC) family of transient circuit analysis Programs.