• DocumentCode
    794230
  • Title

    Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage

  • Author

    Anoikin, Eugene V. ; Sides, Paul J.

  • Author_Institution
    Dept. of Chem. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    3239
  • Lastpage
    3241
  • Abstract
    Polycrystalline garnet thin films were obtained on glass substrates by plasma-activated chemical vapor deposition followed by annealing at 670°C. The single mixed precursor approach was used to achieve vaporization and transport of low-vapor-pressure powdered metalorganic precursors to a plasma reactor. Bi, Ga-substituted dysprosium iron garnet film showed a square Faraday hysteresis loop with a rotation of ~2 deg/μm at 633 nm wavelength and low surface roughness of ~2 nm, which are favorable properties for high-density magneto-optical data storage
  • Keywords
    Faraday effect; bismuth compounds; garnets; magnetic thin films; magneto-optical recording; plasma CVD; 633 nm; 670 C; BiDyGaFe5O12; BiDyGaIG; Faraday hysteresis loop; Faraday rotation; MOCVD; annealing; bismuth-substituted iron garnets; magneto-optical data storage; plasma-activated chemical vapor deposition; polycrystalline thin films; single mixed precursor; surface roughness; Annealing; Chemical vapor deposition; Garnet films; Glass; Inductors; Plasma chemistry; Plasma properties; Plasma transport processes; Plasma waves; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.490335
  • Filename
    490335