DocumentCode :
794387
Title :
Gain spectra and saturation power of asymmetrical multiple quantum well semiconductor optical amplifiers
Author :
Lysak, V.V. ; Kawaguchi, H. ; Sukhoivanov, I.A.
Volume :
152
Issue :
2
fYear :
2005
fDate :
4/8/2005 12:00:00 AM
Firstpage :
131
Lastpage :
139
Abstract :
A new numerical model for calculating the steady-state gain properties of asymmetrical multiple quantum well (MQW) semiconductor optical amplifiers (SOAs) is presented. The model consists of a rate-equation system for carriers in each quantum well, with an integrated gain model. Using this model, the calculated gain spectra and saturation characteristics of an asymmetrical 6-QW SOA are compared with those for symmetrical MQW SOAs. The asymmetrical MQW SOA is found to have a gain bandwidth of about 137 nm and a saturation power of -8.8 dB m at 202 mA, both greater than conventional symmetrical MQW SOAs at the same gain.
Keywords :
laser theory; optical saturation; quantum well lasers; semiconductor device models; semiconductor optical amplifiers; asymmetrical multiple quantum well semiconductor optical amplifiers; gain spectra; integrated gain model; numerical model; rate-equation system; saturation characteristics; saturation power; steady-state gain properties; symmetrical MQW SOAs;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20045021
Filename :
1425784
Link To Document :
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