Title :
Scalable architecture for word HMM-based speech recognition and VLSI implementation in complete system
Author :
Yoshizawa, Shingo ; Wada, Naoya ; Hayasaka, Noboru ; Miyanaga, Yoshikazu
Author_Institution :
Graduate Sch. of Inf. Sci. Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
This paper describes a scalable architecture for real-time speech recognizers based on word hidden Markov models (HMMs) that provide high recognition accuracy for word recognition tasks. However, the size of their recognition vocabulary is small because its extremely high computational costs cause long processing times. To achieve high-speed operations, we developed a VLSI system that has a scalable architecture. The architecture effectively uses parallel computations on the word HMM structure. It can reduce processing time and/or extend the word vocabulary. To explore the practicality of our architecture, we designed and evaluated a complete system recognizer, including speech analysis and noise robustness parts, on a 0.18-μm CMOS standard cell library and field-programmable gate array. In the CMOS standard-cell implementation, the total processing time is 56.9 μs/word at an operating frequency of 80 MHz in a single system. The recognizer gives a real-time response using an 800-word vocabulary.
Keywords :
CMOS digital integrated circuits; VLSI; field programmable gate arrays; hidden Markov models; speech recognition; 0.18 micron; 80 MHz; CMOS cell library; VLSI implementation; field-programmable gate array; parallel computations; recognition vocabulary; speech analysis; speech recognition; speech recognizers; word hidden Markov models; word recognition; word vocabulary; Computational efficiency; Computer architecture; Concurrent computing; Hidden Markov models; Libraries; Noise robustness; Speech analysis; Speech recognition; Very large scale integration; Vocabulary; Hidden Markov model (HMM); VLSI implementation; scalable architecture; speech recognition;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2005.854408