Optoelectronic integrated receivers on InP substrates by organometallic vapor phase epitaxy

Author

Sasaki, Goro ; Koike, Ken-Ichi ; Kuwata, Nobuhiro ; Ono, Kimizo

Author_Institution

Sumitomo Electr. Ind., Yokohama, Japan

Volume

7

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

1510

Lastpage

1514

Abstract

The monolithic integrated ion of a p-i-n photodiode and a high-electron mobility transistor (HEMT) amplifier on an InP substrate by organometallic vapor-phase epitaxy is discussed. The receiver operated with up to 1.6 Gb/s nonreturn-to-zero optical signals. The responsivity was 1 kV/W and the minimum optical power at a bit error rate of 10^-9 was -24 dBm for 400 Mb/s nonreturn-to-zero optical signals

Keywords

high electron mobility transistors; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; vapour phase epitaxial growth; 1.6 Gbit/s; 400 Mbit/s; HEMT amplifier; InP substrates; bit error rate; high-electron mobility transistor; minimum optical power; monolithic integrated ion; nonreturn-to-zero optical signals; optoelectronic integrated receivers; organometallic vapor phase epitaxy; p-i-n photodiode; responsivity; Epitaxial growth; HEMTs; Indium phosphide; MODFETs; Optical amplifiers; Optical receivers; PIN photodiodes; Particle beam optics; Stimulated emission; Substrates;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.39090

Filename

39090