Title :
Optoelectronic integrated receivers on InP substrates by organometallic vapor phase epitaxy
Author :
Sasaki, Goro ; Koike, Ken-Ichi ; Kuwata, Nobuhiro ; Ono, Kimizo
Author_Institution :
Sumitomo Electr. Ind., Yokohama, Japan
fDate :
10/1/1989 12:00:00 AM
Abstract :
The monolithic integrated ion of a p-i-n photodiode and a high-electron mobility transistor (HEMT) amplifier on an InP substrate by organometallic vapor-phase epitaxy is discussed. The receiver operated with up to 1.6 Gb/s nonreturn-to-zero optical signals. The responsivity was 1 kV/W and the minimum optical power at a bit error rate of 10-9 was -24 dBm for 400 Mb/s nonreturn-to-zero optical signals
Keywords :
high electron mobility transistors; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; vapour phase epitaxial growth; 1.6 Gbit/s; 400 Mbit/s; HEMT amplifier; InP substrates; bit error rate; high-electron mobility transistor; minimum optical power; monolithic integrated ion; nonreturn-to-zero optical signals; optoelectronic integrated receivers; organometallic vapor phase epitaxy; p-i-n photodiode; responsivity; Epitaxial growth; HEMTs; Indium phosphide; MODFETs; Optical amplifiers; Optical receivers; PIN photodiodes; Particle beam optics; Stimulated emission; Substrates;
Journal_Title :
Lightwave Technology, Journal of
