Title :
Monte Carlo modelling of multiple transit regions in Gunn diodes
Author :
Teoh, Y.P. ; Dunn, G.M.
Author_Institution :
Dept. of Eng., Univ. of Aberdeen, UK
fDate :
7/18/2002 12:00:00 AM
Abstract :
A simple design to increase the output power of Gunn diodes used for high frequency generation is to incorporate multiple transit regions into a single device. The Monte Carlo simulations described here predict that the power attainable from the Gunn diodes increases linearly with the square of the number of transit regions
Keywords :
Gunn diodes; Monte Carlo methods; millimetre wave diodes; millimetre wave generation; semiconductor device models; Gunn diodes; Monte Carlo modelling; active microwave devices; attainable power; high frequency generation; long diodes; multiple transit regions; negative differential mobility; output power; self-sustained current oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020534
