DocumentCode
794633
Title
Monte Carlo modelling of multiple transit regions in Gunn diodes
Author
Teoh, Y.P. ; Dunn, G.M.
Author_Institution
Dept. of Eng., Univ. of Aberdeen, UK
Volume
38
Issue
15
fYear
2002
fDate
7/18/2002 12:00:00 AM
Firstpage
830
Lastpage
831
Abstract
A simple design to increase the output power of Gunn diodes used for high frequency generation is to incorporate multiple transit regions into a single device. The Monte Carlo simulations described here predict that the power attainable from the Gunn diodes increases linearly with the square of the number of transit regions
Keywords
Gunn diodes; Monte Carlo methods; millimetre wave diodes; millimetre wave generation; semiconductor device models; Gunn diodes; Monte Carlo modelling; active microwave devices; attainable power; high frequency generation; long diodes; multiple transit regions; negative differential mobility; output power; self-sustained current oscillations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020534
Filename
1021871
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