Title :
Inversion channel vertical cavity double heterostructure optoelectronic switch lasers
Author :
Evaldsson, P.A. ; Taylor, G.W. ; Cooke, P. ; Jiang, S.
Author_Institution :
R. Inst. of Technol., Stockholm, Sweden
fDate :
5/25/1995 12:00:00 AM
Abstract :
Inversion channel technology provides a straightforward way to integrate lasers with detectors and transistors. One inversion channel laser is the double heterostructure optoelectronic switch VCSEL which is reported here with a 2.1 mA threshold for a 10 μm diameter device. A deposited stack of SiO2/TiO2 was used with post-growth etching of the cavity. Excellent electrical switching parameters or Vsh=13 V, Vh=2.1 V and Ih=0.5 mA were obtained, making the device suitable for the digital optoelectronic sensing of small optical inputs
Keywords :
inversion layers; optical switches; semiconductor lasers; semiconductor switches; surface emitting lasers; 10 micron; 2.1 mA; DOES VCSEL; SiO2-TiO2; SiO2/TiO2 stack; detectors; digital optoelectronic sensing; electrical switching; integration; inversion channel technology; post-growth etching; transistors; vertical cavity double heterostructure optoelectronic switch lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950581
