Title :
GaAs/AlGaAs electro-optic modulator with bandwidth >40 GHz
Author :
Spickermann, R. ; Dagli, N. ; Peters, M.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/25/1995 12:00:00 AM
Abstract :
A high speed GaAs/AlGaAs travelling wave Mach-Zehnder electro-optic modulator has been fabricated. The device uses a novel slow wave electrode design to achieve phase velocity matching and has a measured electrical bandwidth >40 GHz
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; high-speed optical techniques; slow wave structures; 40 GHz; GaAs-AlGaAs; electrical bandwidth; high speed travelling wave Mach-Zehnder electro-optic modulator; phase velocity matching; slow wave electrode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950621
