Title :
Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer
Author :
Su, Yan-Kuin ; Wei, Sun-Chin ; Wang, Ruey-Lue ; Chang, Shoou-Jinn ; Ko, Chih-Hsin ; Kuan, Ta-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure field effect transistors (HFETs) with and without Si-doped AlGaN layer were fabricated and investigated. HFETs with the Si-doped AlGaN carrier-injection layer show better DC performance, and the transconductance is 150 mS/mm. However, the HFETs with Si-doped AlGaN layer present the deviation from the 1/f noise at low frequency. The Lorentz shape was observed in the noise spectrum. It suggests that traps might be more pronounced in this kind of structure. Therefore, the DC characteristics of HFETs can be improved by the insertion of Si-doped AlGaN layer, but it can result in more low-frequency noise with the carrier-injection layer.
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; electron traps; field effect transistors; flicker noise; gallium compounds; semiconductor device noise; silicon; wide band gap semiconductors; 150 mS/mm; AlGaN-AlGaN:Si-AlGaN-GaN; DC characteristics; GaN-based HFETs; LF noise; Si-doped AlGaN carrier injection layer; flicker noise; heterostructure FETs; heterostructure field effect transistors; low-frequency noise; noise spectrum; transconductance; traps; 1f noise; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; Low-frequency noise; MODFETs; Noise shaping; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.817869
