Title :
Simulation of the generation of ultrafast midinfrared laser pulses
Author :
Elezzabi, Abdulhakem Y. ; Meyer, Jochen
Author_Institution :
Dept. of Phys., British Columbia Univ., Vancouver, BC, Canada
fDate :
8/1/1992 12:00:00 AM
Abstract :
A numerical simulation of an ultrafast semiconductor switch for 10.6 μm CO2 radiation is presented. It is based on the solution of the Helmholtz electromagnetic wave equation for p-polarized light and the ambipolar diffusion equation. Calculations are performed in various time dependent inhomogeneous plasma profiles. The analysis shows that the temporal reflectivity depends on the initial visible radiation fluence, duration, and diffusion coefficient of the sample. The results support the feasibility of generating midinfrared ultrashort pulses between 100 fs and 65 ps. By proper choice of the laser fluence and the semiconductor material, longer pulses are also possible
Keywords :
III-V semiconductors; high-speed optical techniques; laser beams; optical switches; reflectivity; semiconductor switches; 10.6 micron; 65 to 100 fs; CO2; GaAs; Helmholtz electromagnetic wave equation; ambipolar diffusion equation; diffusion coefficient; laser fluence; mid IR laser pulse generation; numerical simulation; p-polarized light; semiconductor material; temporal reflectivity; time dependent inhomogeneous plasma profiles; ultrafast midinfrared laser pulses; ultrafast semiconductor switch; visible radiation fluence; Electromagnetic scattering; Equations; Numerical simulation; Optical pulse generation; Plasma materials processing; Plasma simulation; Plasma waves; Reflectivity; Semiconductor lasers; Switches;
Journal_Title :
Quantum Electronics, IEEE Journal of
