Title :
A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor
Author :
Pei, Zingway ; Liang, C.S. ; Lai, L.S. ; Tseng, Y.T. ; Hsu, Y.M. ; Chen, P.S. ; Lu, S.C. ; Tsai, M.-J. ; Liu, C.W.
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar transistors (HPT). The SiGe-Si MQWs are used as a light absorption layer. The cutoff frequency (f/sub T/) and maximum oscillation frequency (f/sub MAX/) of the phototransistor are found to be 25 GHz, which is suitable for gigabit integrated circuit. The responsivity of 1.3 A/W (external quantum efficiency = 194%) and the pulsewidth of 184 ps at a wavelength of 850 nm are observed. The excellent electrical and optical performance of the Si-SiGe MQW phototransistor makes it attractive for future Si-based optoelectronic integrated circuit applications.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; integrated optoelectronics; phototransistors; quantum well devices; semiconductor materials; semiconductor quantum wells; silicon; 184 ps; 194 percent; 25 GHz; 850 nm; OEIC applications; Si/sub 0.5/Ge/sub 0.5/-Si; SiGe-Si MQW heterojunction phototransistor; cutoff frequency; gigabit integrated circuits; heterojunction bipolar transistors; high-performance MQW phototransistor; light absorption layer; maximum oscillation frequency; multiple quantum well phototransistor; optical performance; optoelectronic IC applications; responsivity; Absorption; Application specific integrated circuits; Cutoff frequency; Heterojunction bipolar transistors; Integrated optics; Optical pulses; Photonic integrated circuits; Phototransistors; Quantum well devices; Space vector pulse width modulation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.817870
