• DocumentCode
    794875
  • Title

    Visible multi-quantum-well laser diode composed of (AlGaAs)m(GaAs)n short period superlattice

  • Author

    Imamoto, Hiroshi ; Sato, Fumiaki ; Imanaka, K. ; Shimura, M.

  • Author_Institution
    Central R&D Labs., OMRON Tateisi Electron. Co., Kyoto, Japan
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    Short-period (AlGaAs)m(GaAs)n superlattices have been applied to the active layer in a GRIN-SCH multi-quantum-well laser diode using molecular beam epitaxy. A short wave-length of 720 nm and high-temperature CW operation at over 100 degrees C were achieved with a low threshold current of 24 mA and high differential quantum efficiency of 75% at room temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; integrated optics; laser transitions; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; 100 degC; 24 mA; 720 nm; 75 percent; AlGaAs-GaAs; GRIN-SCH; III-V semiconductors; MBE; MQW device; active layer; graded index; high differential quantum efficiency; high-temperature CW operation; laser diode; low threshold current; molecular beam epitaxy; multi-quantum-well; room temperature; separate confinement heterostructure; short period superlattice; short wave-length; visible light output;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890089
  • Filename
    14259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794875