• DocumentCode
    794917
  • Title

    Singlemode InGaAsP Fabry-Perot lasers at absolute predetermined wavelengths by intracavity Er3+-doped single crystal absorptions

  • Author

    Auzel, F. ; Gautier, C.

  • Author_Institution
    Lab. de Bagneux, CNET, Bagneux, France
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    883
  • Lastpage
    885
  • Abstract
    By shaping the gain curve of a multimode Fabry-Perot (FP) laser with an intracavity Er3+:LiYF4 absorption, singlemode selection with 40 and 36 dB rejection ratios is obtained for absolute emission wavelengths at 1515.4 and 1548.9 nm. The wavelength depends essentially on the internal crystal field at the Er3+ site, whereas other wavelengths are predetermined by combinations with an Er3+-doped YAG crystal
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser frequency stability; laser modes; light absorption; semiconductor lasers; 1515.4 nm; 1548.9 nm; Er3+-doped YAG crystal; InGaAsP; LiYF4:Er; YAG:Er; YAl5O12:Er; YLF:Er; absolute emission wavelengths; absolute predetermined wavelengths; gain curve shaping; internal crystal field; intracavity Er3+-doped single crystal absorptions; intracavity Er3+:LiYF4 absorption; multimode Fabry-Perot laser; rejection ratios; singlemode InGaAsP Fabry-Perot lasers; singlemode selection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950632
  • Filename
    390927