DocumentCode :
794926
Title :
Low resistance 1.55 μm InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure
Author :
Matsumoto, S. ; Iga, R. ; Kadota, Y. ; Yamamoto, M. ; Fukuda, M. ; Kishi, K. ; Itaya, Y.
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
Volume :
31
Issue :
11
fYear :
1995
fDate :
5/25/1995 12:00:00 AM
Firstpage :
882
Lastpage :
883
Abstract :
An InGaAsP (λg=1.3 μm) buffer layer, inserted between an InGaAs contact layer and an InP cladding layer, efficiently reduces the differential resistance of laser diodes at a threshold current of 10 mA. Laser diodes using this multilayer contact structure show long-term stable operation of more than 104 h at 50°C
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser stability; laser transitions; semiconductor lasers; 1.55 micron; 10 mA; 1E4 hr; 50 C; InGaAs contact layer; InGaAs-InGaAsP-InP; InGaAsP buffer layer; InP cladding layer; buried heterostructure; differential resistance reduction; laser diodes; long-term stable operation; multilayer contact structure; semi-insulating BH LDs; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950604
Filename :
390928
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=794926
بازگشت