Title :
40 Gbit/s AlGaAs/GaAs HBT 4:1 multiplexer IC
Author :
Runge, K. ; Pierson, R.L. ; Zampardi, P.J. ; Thomas, P.B. ; Yu, J. ; Wang, K.C.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fDate :
5/25/1995 12:00:00 AM
Abstract :
An experimental high speed 4:1 multiplexer integrated circuit capable of handling four simultaneous data channels without external delay lines is presented. The experimental circuit features an inherently fast two-stage configuration, with operation up to 40 Gbit/s demonstrated in an advanced AlGaAs/GaAs heterojunction bipolar technology. The system clock frequency is half the bit rate with only one additional self-generated internal clock necessary. A unique circuit topology has been chosen, which acquires, delays, regenerates, and retimes the incoming data
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; gallium arsenide; heterojunction bipolar transistors; multiplexing equipment; 40 Gbit/s; AlGaAs-GaAs; HBT IC; four simultaneous data channels; heterojunction bipolar technology; high speed 4:1 multiplexer; multiplexer integrated circuit; self-generated internal clock; two-stage configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950634
