Title :
Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
Author :
Chen, K.J. ; Maezawa, K. ; Arai, K. ; Yamamoto, M. ; Enoki, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
5/25/1995 12:00:00 AM
Abstract :
A new approach to reducing the source resistance in InP-based InAlAs-InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2 Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5 μm long gate enhancement-mode HEMT
Keywords :
III-V semiconductors; electric resistance; high electron mobility transistors; indium compounds; platinum; semiconductor technology; 0.5 micron; 1170 mS/mm; InAlAs-InGaAs; Pt; Pt-based buried-gate technology; enhancement-mode HEMTs; high speed digital applications; source resistance; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950603
