Title :
Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes
Author :
Simoen, Eddy ; Vasina, P. ; Claeys, Cor
fDate :
6/8/1995 12:00:00 AM
Abstract :
The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n+p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics. It is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface
Keywords :
1/f noise; electron beam effects; elemental semiconductors; p-n junctions; semiconductor device noise; semiconductor diodes; silicon; Czochralski substrates; Si n+p junction diodes; Si-SiO2; Si-SiO2 interface; degradation; excess 1/f noise; float-zone substrates; high-energy electron irradiation; low-frequency noise; reverse bias gated diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950644
