• DocumentCode
    795274
  • Title

    Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes

  • Author

    Simoen, Eddy ; Vasina, P. ; Claeys, Cor

  • Volume
    31
  • Issue
    12
  • fYear
    1995
  • fDate
    6/8/1995 12:00:00 AM
  • Firstpage
    1016
  • Lastpage
    1018
  • Abstract
    The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n+p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics. It is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface
  • Keywords
    1/f noise; electron beam effects; elemental semiconductors; p-n junctions; semiconductor device noise; semiconductor diodes; silicon; Czochralski substrates; Si n+p junction diodes; Si-SiO2; Si-SiO2 interface; degradation; excess 1/f noise; float-zone substrates; high-energy electron irradiation; low-frequency noise; reverse bias gated diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950644
  • Filename
    390962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795274