DocumentCode :
79554
Title :
Temperature Dependence of the Spontaneous Emission Factor in Subwavelength Semiconductor Lasers
Author :
Smalley, Joseph S. T. ; Qing Gu ; Fainman, Yeshaiahu
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
Volume :
50
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
175
Lastpage :
185
Abstract :
We perform a rigorous analysis of the temperature dependence of the spontaneous emission factor, β, in subwavelength semiconductor lasers. The analysis combines a recent formulation of the Purcell effect in semiconductor nanolasers with finite-element modeling and established theoretical models for temperature-dependent emission spectra. While the method is general, we apply it to a subwavelength metallo-dielectric nanolaser, and find that β of the dominant mode decreases sharply below a transition temperature. This result is found for both positive and negative thermo-optic coefficients of the semiconductor material, and occurs because of detuning between the dominant mode and peak emission. The analysis enables better understanding of nanolaser dynamics, as well as the design and characterization of high-β nanolasers.
Keywords :
finite element analysis; laser tuning; nanophotonics; quantum well lasers; spontaneous emission; thermo-optical effects; Purcell effect; finite-element modeling; high-β nanolasers; nanolaser dynamics; negative thermo-optic coefficients; positive thermo-optic coefficients; semiconductor material; semiconductor nanolasers; spontaneous emission factor; subwavelength metallo-dielectric nanolaser; subwavelength semiconductor lasers; temperature-dependent emission spectra; theoretical model; transition temperature; Cavity resonators; Laser modes; Spontaneous emission; Temperature; Temperature dependence; Vertical cavity surface emitting lasers; Indium gallium arsenide phosphide; laser modes; nanophotonics; nanoscale devices; photoluminescence; quantum well lasers; semiconductor lasers; spontaneous emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2014.2303075
Filename :
6727400
Link To Document :
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