Predicted Effects of Neutron Irradiation on GaAs Junction Field Effect Transistors

The fast-neutron-induced degradation of the properties of n-channel GaAs junction field effect transistors (JFET) is estimated and the results are compared with the effects produced in n-and p-channel silicon field effect transistors. The estimated degradation of the maximum transconductance, maximum drain current, pinch-off voltage, and cutoff frequency is based on electrical measurement data taken for fast-neutron-irradiated bulk n-type GaAs samples. It is concluded that n-channel GaAs JFET´s should be at least as resistant to fast neutrons as either n-or p-channel Si JFET´s.