DocumentCode :
795552
Title :
Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguide
Author :
Hofstetter, D. ; Zappe, H.P. ; Epler, J.E.
Author_Institution :
Paul Scherrer Inst., Zurich, Switzerland
Volume :
31
Issue :
12
fYear :
1995
fDate :
6/8/1995 12:00:00 AM
Firstpage :
980
Lastpage :
982
Abstract :
A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2 W/A
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; integrated optics; optical fabrication; quantum well lasers; ridge waveguides; vacancies (crystal); waveguide lasers; 25 mA; 5 mW; GaAs-AlGaAs; cleaved facet; fabrication; grating reflector; growth; monolithically integrated transparent waveguide; nonabsorbing grating; optical output power; ridge waveguide DBR laser; slope efficiencies; threshold currents; vacancy-enhanced quantum well disordering;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950643
Filename :
390986
Link To Document :
بازگشت