Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguide

Author

Hofstetter, D. ; Zappe, H.P. ; Epler, J.E.

Author_Institution

Paul Scherrer Inst., Zurich, Switzerland

Volume

31

Issue

12

fYear

1995

fDate

6/8/1995 12:00:00 AM

Firstpage

980

Lastpage

982

Abstract

A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2 W/A

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; integrated optics; optical fabrication; quantum well lasers; ridge waveguides; vacancies (crystal); waveguide lasers; 25 mA; 5 mW; GaAs-AlGaAs; cleaved facet; fabrication; grating reflector; growth; monolithically integrated transparent waveguide; nonabsorbing grating; optical output power; ridge waveguide DBR laser; slope efficiencies; threshold currents; vacancy-enhanced quantum well disordering;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950643

Filename

390986