Title :
Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors
Author :
Plis, Elena ; Rodriguez, J.-B. ; Lee, S.J. ; Krishna, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM
Abstract :
Electrochemical passivation of InAs/GaSb type-II strain layer superlattice detectors is presented. Thickness and composition of the deposited sulphur coating were determined using auger electron spectroscopy. Passivation lead to a decrease in the dark current density and the dynamic impedance-area product at zero bias (R0A) improved by three orders of magnitude at 50 K
Keywords :
Auger electron spectra; III-V semiconductors; current density; gallium compounds; indium compounds; infrared detectors; passivation; photodiodes; semiconductor superlattices; 50 K; Auger electron spectroscopy; InAs-GaSb; dark current density; dynamic impedance-area product; electrochemical passivation; infrared detectors; sulphur coating; type-II strain layer superlattice detectors;
Journal_Title :
Electronics Letters
