Title :
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
Author :
Shin, J.-H. ; Yoo, B.-S. ; Han, W.-S. ; Kwon, O.-K. ; Ju, Y.-G. ; Lee, Joun-Ho
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; integrated optics; oxidation; quantum well lasers; surface emitting lasers; 1.6 mA; 2.3 V; 35 C; 5.4 percent; CW operation; In/sub 0.4/Al/sub 0.6/As; InAlGaAs-InP; InAlGaAs-InP material system; MOCVD growth; all-monolithic InAlGaAs VCSELs; current confinement; external quantum efficiency; room temperature; strained In/sub 0.4/Al/sub 0.6/As layer; threshold characteristics; threshold current; threshold voltage; vertical-cavity surface-emitting laser; wet oxidation; Chemical lasers; Epitaxial growth; MOCVD; Optical materials; Oxidation; Surface emitting lasers; Surface waves; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1021959
