100h II-VI blue-green laser diode

Author

Taniguchi, S. ; Hino, T. ; Itoh, S. ; Nakano, K. ; Nakayama, N. ; Ishibashi, A. ; Ikeda, M.

Author_Institution

Res. Center, Sony Corp., Yokohama, Japan

Volume

32

Issue

6

fYear

1996

fDate

3/14/1996 12:00:00 AM

Firstpage

552

Lastpage

553

Abstract

By reducing the dark-spot density to <3×10³ cm ^-2, device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe-ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW. The threshold current density is 533 A/cm² and the lasing wavelength is 514.7 nm. Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction

Keywords

II-VI semiconductors; cadmium compounds; current density; life testing; optical testing; quantum well lasers; semiconductor device testing; stacking faults; zinc compounds; 1 mW; 100 h; 514.7 nm; II-VI blue-green laser diode; LD failure; ZnCdSe-ZnSSe-ZnMgSSe; ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure laser diode; constant light output power; dark-spot density; device lifetime; lasing wavelength; macroscopic defect; recombination enhanced defect reaction; room temperature continuous-wave operation; stacking faults; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960415

Filename

490467