Title :
Extremely wide-bandwidth distributed Bragg reflectors using chirped semiconductor/oxide pairs
Author :
Hummel, S.G. ; MacDougal, M.H. ; Dapkus, P.D.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
6/8/1995 12:00:00 AM
Abstract :
Significant reflectance band broadening through arithmetic and geometric chirping of AlAs oxide/(Al,Ga)InP distributed Bragg reflector (DBR) periodicity has been demonstrated. Reflectivities >90% have been achieved for 7-pair structures over a wavelength range as large as 713 nm, and 70% reflectance was measured over a range of 1388 nm
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; light emitting diodes; reflectivity; semiconductor lasers; surface emitting lasers; 400 to 1400 nm; AlInP; GaInP; LEDs; VCSELs; arithmetic chirping; chirped semiconductor/oxide pairs; geometric chirping; periodicity; reflectance band broadening; reflectivities; seven-pair structures; wavelength range; wide-bandwidth distributed Bragg reflectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950676
