Title :
Analysis, fabrication, and characterization of 1.55-μm selection-free tapered stripe DFB lasers
Author :
Grillot, F. ; Thedrez, B. ; Mallecot, F. ; Chaumont, C. ; Hubert, S. ; Martineau, M.F. ; Pinquier, A. ; Roux, L.
Author_Institution :
Alcatel Res. & Innovation, ALCATEL-OPTO+, Marcoussis, France
Abstract :
A new selection-free laser structure for monomode behavior based on an engineering of the stripe geometry is proposed. The structure is designed in order to eliminate facet phase effects and laser to laser variations. The effect of spatial hole burning is simulated and an enhancement of the sidemode suppression ratio (SMSR) with power is predicted and measured. Moreover, the sensitivity to technological fluctuations is theoretically analyzed. Experimentally, lasers having a 47-dB SMSR at 10 mW and an excellent homogeneity from laser to laser is obtained on a two inch wafer.
Keywords :
antireflection coatings; distributed feedback lasers; ion implantation; laser modes; optical fabrication; optical hole burning; quantum well lasers; waveguide lasers; 1.55 micron; 10 mW; DFB lasers; antireflection coating; buried ridge stripe; chip to chip homogeneity; fabrication; facet phase effects; monomode behavior; phase-shift device; proton implantation; selection-free tapered stripe lasers; sidemode suppression ratio; single-mode laser; spatial hole burning; strained layer multiquantum wells; stripe geometry engineering; technological fluctuations sensitivity; threshold characteristics; Fluctuations; Geometrical optics; Gratings; Laser modes; Laser theory; Optical control; Optical design; Optical device fabrication; Power engineering and energy; Power measurement;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1021962
