1.55-μm InP-InGaAsP Fabry-Perot lasers with integrated spot size converters using antiresonant reflecting optical waveguides

Author

Galarza, M. ; De Mesel, K. ; Verstuyft, S. ; Aramburu, C. ; Moerman, I. ; Van Daele, Peter ; Baets, Roel ; Lopez-Amo, M.

Author_Institution

Electr. & Electron. Dept., Public Univ. of Navarre, Navarra, Spain

Volume

14

Issue

8

fYear

2002

Firstpage

1043

Lastpage

1045

Abstract

We demonstrate a new concept for InGaAsP-InP 1.55-μm Fabry-Perot lasers integrated with spot size converters using type-A antiresonant reflecting optical waveguides. The fabrication of such devices allows to avoid the growth of thick layers of quaternary material with low Ga and As fraction, which are difficult to achieve and grow. Reduced far-field divergence angles (10/spl deg/ × 27/spl deg/) and improved coupling to cleaved standard single-mode fibers (2.6-dB coupling loss) are achieved. The proposed device is compatible with conventional epitaxial techniques and lithographic methods.

Keywords

Fabry-Perot resonators; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical couplers; optical fabrication; optical planar waveguides; quantum well lasers; semiconductor device packaging; vapour phase epitaxial growth; waveguide lasers; 1.55 micron; 2.6 dB; Fabry-Perot lasers; InP-InGaAsP; MOCVD; active waveguide; antiresonant reflecting optical waveguides; cleaved standard single-mode fibers; continuous-wave mode; coupling efficiency; design; fabrication; improved coupling; integrated spot size converters; large passive ridge; low-loss integrated optics; multiple quantum-well; performance; planar epitaxial growth; reduced far-field divergence angles; semiconductor device modeling; semiconductor device packaging; vertical optical confinement; Fabry-Perot; Indium phosphide; Integrated optics; Laser modes; Optical device fabrication; Optical fiber losses; Optical refraction; Optical waveguides; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1021963

Filename

1021963