Title :
High efficiency selectively oxidised MBE grown vertical-cavity surface-emitting lasers
Author :
Weigl, B. ; Grabherr, M. ; Reiner, G. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
3/14/1996 12:00:00 AM
Abstract :
The authors have used conventional solid source MBE with Be p-type doping and single layer selective oxidation to produce 20 μm diameter VCSELs (λ=980 nm) with 47% wallplug efficiency at 10 mW output power and over 40 mW maximum output power in a configuration without heatsinking
Keywords :
laser cavity resonators; molecular beam epitaxial growth; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; 10 mW; 40 mW; 47 percent; 980 nm; Be p-type doping; high efficiency selectively oxidised MBE growth; maximum output power; output power; single layer selective oxidation; solid source MBE; vertical-cavity surface-emitting lasers; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960397
