Title :
Polarisation characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers
Author :
Chen, Y.H. ; Wilkinson, C.I. ; Woodhead, J. ; Button, C.C. ; David, J.P.R. ; Pate, M.A. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
3/14/1996 12:00:00 AM
Abstract :
The first observation of polarisation selectivity in In0.48 Ga1-xAlxP based visible vertical cavity surface emitting lasers grown on 10° off axis (100) substrates is reported. All the measured devices show polarisation dominance in the ⟨011⟩ direction over a range of lasing wavelength (630 to 660 nm). The slope efficiency in this direction is typically 2 to 20 times that in the orthogonal ⟨01¯1⟩ direction. There is no evidence of polarisation switching with increased current
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; surface emitting lasers; 630 to 660 nm; InGaAlP-AlGaAs; off axis substrates; polarisation selectivity; slope efficiency; visible vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960389
