Title :
ZnCdSeTe-based orange light-emitting diode
Author :
Chen, W.R. ; Chang, S.J. ; Su, Y.K. ; Chen, J.F. ; Lan, W.H. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H. ; Liaw, U.H.
Author_Institution :
Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It was found that a 15% Te can result in a 91 nm photoluminescence (PL) red-shift at 16 K and a 81 nm PL red-shift at room temperature. Such a ZnSe-based orange LED can be integrated easily with conventional ZnSe-based blue-green LED on the same GaAs substrate. Thus, such a ZnSe-based orange LED is potentially useful in realizing a new one-chip type white LED without the use of phosphor.
Keywords :
II-VI semiconductors; cadmium compounds; light emitting diodes; optical fabrication; photoluminescence; red shift; semiconductor quantum wells; zinc compounds; 16 K; GaAs substrate; LEDs; ZnCdSe-ZnSSe; ZnCdSe-ZnSSe multiple quantum-well active region; ZnCdSeTe; ZnCdSeTe-based orange light-emitting diode; ZnSe-based blue-green LED; ZnSe-based orange LED; one-chip type white LED; optical fabrication; photoluminescence; red-shift; room temperature; well layers; Excitons; Fabrication; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Phosphors; Quantum well devices; Substrates; Tellurium; Zinc compounds;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1021969
