A low-noise and broad-band erbium-doped tellurite fiber amplifier with a seamless amplification band in the C- and L-bands

Author

Ono, H. ; Mori, A. ; Shikano, K. ; Shimizu, M.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

14

Issue

8

fYear

2002

Firstpage

1073

Lastpage

1075

Abstract

A low-noise broad-band EDFA with a seamless amplification band in both the C- and L-bands is successfully developed by using erbium-doped tellurite fibers. This EDFA exhibits a broad amplification bandwidth of 70.8 nm (from 1532.7 to 1603.5 nm) with a gain excursion of less than 1.5 dB, an average gain of 24.3 dB, and a noise figure of less than 6 dB (less than 5.3 dB for extracting the insertion loss of the input end).

Keywords

erbium; laser noise; optical fibre amplifiers; optical fibre communication; optical fibre losses; optical noise; wavelength division multiplexing; 1532.7 to 1603.5 nm; 24.3 dB; C-band; EDFA; Er-doped tellurite low-noise broad-band fiber amplifier; L-band; WDM; average gain; broad amplification bandwidth; erbium-doped tellurite fibers; gain excursion; input end; insertion loss; noise figure; seamless amplification band; wavelength division multiplexing; Erbium-doped fiber amplifier; Insertion loss; Low-noise amplifiers; Noise figure; Optical fiber amplifiers; Optical fiber communication; Optical losses; Power amplifiers; Power generation; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1021972

Filename

1021972