• DocumentCode
    795785
  • Title

    Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junction

  • Author

    Strollo, Antonio Giuseppe Maria ; Spirito, P.

  • Author_Institution
    Dept. of Electron., Naples Univ., Italy
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    A model is developed for the current in a small-geometry p+n junction. It is based on a two-dimensional analytical solution for the continuity equation in the low-injection regime. Results for both the minority-carriers concentration and current are presented.
  • Keywords
    carrier density; diffusion in solids; minority carriers; p-n junctions; semiconductor device models; carrier concentration; carrier current; continuity equation; low-injection regime; minority-carrier diffusion; semiconductor devices; small-geometry p +n junction; two-dimensional model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890095
  • Filename
    14265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795785