Development of temperature-stable thick-film dielectrics. II. Medium-K dielectric

Author

Chiou, Bi-Shiou

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

4

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

798

Lastpage

808

Abstract

For pt.I see ibid., vol.12, no.4, p.789-97 (1989). A temperature-stable, medium dielectric constant (K=100) thick-film dielectric is developed for high-temperature electronic instrumentation. A theoretical model predicts a temperature-insensitive dielectric in the glass-Bi₄Ti₃O₁₂-SrTiO ₃ system, while experimental results suggest an optimum composition in the glass-SrTiO₃-BaTiO₃ system. Interfacial polarization is the major factor which causes the deviation. The medium-K dielectric, when properly fired, terminated, and heat-treated, can work adequately from 25°C to 400°C

Keywords

barium compounds; bismuth compounds; dielectric properties of solids; hybrid integrated circuits; integrated circuit technology; materials testing; permittivity; strontium compounds; thick films; 25 to 400 degC; CaO-BaO-Al₂O₃-B₂O₃-SiO₂-Bi₄Ti₃O₁₂-SrTiO ₃; PbO-B₂O₃-SiO₂-Al₂O ₃-Bi₄Ti₃O₁₂-SrTiO₃; SrTiO₃-BaTiO₃; dielectric firing; dielectric heat treatment; dielectric termination; high-temperature electronic instrumentation; interfacial polarization; medium dielectric constant; medium permittivity dielectrics; optimum composition; temperature-insensitive dielectric; temperature-stable thick-film dielectrics; Capacitors; Crystallization; Dielectric constant; Dielectric materials; Dispersion; Glass; Microelectronics; Polarization; Predictive models; Temperature distribution;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.49049

Filename

49049