Title :
Ge Crystal Growth and Evaluation as Ge(Li) Detector Material
Author :
Wichner, R. ; Armantrout, G.A. ; Brown, T.G.
Author_Institution :
University of California, Lawrence Radiation Laboratory Livermore, California 94550
fDate :
6/1/1970 12:00:00 AM
Abstract :
A comprehensive program of germanium single crystal growth and the evaluation of such material for use as Ge(Li) detectors is described. The effects of crystal growth parameters such as pull rate, cooling rate, crucible material, and atmosphere, among others, are analyzed by a number of techniques. These techniques include the standard etch-pit density, resistivity profile and minority carrier lifetime measurements as well as others which have been developed at this Laboratory and have been shown to be extremely useful in characterizing the quality of single crystal germanium for Ge(Li) detectors
Keywords :
Atmosphere; Charge carrier lifetime; Conductivity; Cooling; Crystalline materials; Detectors; Etching; Germanium; Measurement standards; Standards development;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1970.4325688
