Photoluminescence excitation and deexcitation mechanism of erbium doped silicon monoxide

The excitation of photoluminescence in erbium doped silicon monoxide is shown to be possible over a continuous pumping spectrum and the decay lifetimes are found to decrease with increasing temperature. These experimental results are explained in the context of a possible indirect pumping mechanism and a back-transfer mechanism, both demonstrating the coupling of the Er^3- ions to the SiO electronic bands