Title :
Colour detection using a buried double p-n junction structure implemented in the CMOS process
Author :
Lu, G.N. ; Chouikha, M.B. ; Sou, G. ; Sedjil, M.
Author_Institution :
Univ. Pierre et Marie Curie, Paris, France
fDate :
3/14/1996 12:00:00 AM
Abstract :
The authors present a novel technique for monochromatic colour detection. By using a buried double p-n junction (BDJ) structure, wavelength-dependent photocurrents I1 and I2 can be measured. And the incident light wavelength can be identified from the ratio I2/I1. The device operation was verified with a test circuit implemented in CMOS process
Keywords :
colorimeters; integrated optoelectronics; p-n junctions; photodetectors; CMOS process; buried double p-n junction structure; incident light wavelength; monochromatic colour detection; test circuit; wavelength-dependent photocurrents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960337
