DocumentCode
795944
Title
Influence of Trapping and Detrapping Effects in Si(Li), Ge(Li) and CdTe Detectors
Author
Mayer, J.W. ; Martini, M. ; Zanio, K.R. ; Fowler, I.L.
Author_Institution
California Institute of Technology Pasadena, California
Volume
17
Issue
3
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
221
Lastpage
234
Abstract
Carrier capture and re-emission effects in semiconductor nuclear particle detectors are characterized by a trapping time ¿+ and detrapping time ¿D. Measurement of these quantities as a function of temperature gives information on capture cross-sections a and activation energies, ET. Trapping and detrapping processes are field dependent. These effects have been investigated in Si(Li) and Ge(Li) detectors and are discussed in relation to operating temperature and detector resolution. The performance of Ge(Li) and CdTe detectors is evaluated in view of the influence of trapping effects.
Keywords
Atomic measurements; Charge measurement; Current measurement; Detectors; Electron mobility; Energy capture; Laboratories; Rivers; Semiconductor materials; Temperature dependence;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1970.4325694
Filename
4325694
Link To Document