DocumentCode :
795955
Title :
High performance injectorless quantum-cascade lasers
Author :
Friedrich, A. ; Boehm, G. ; Amann, M.-C. ; Scarpa, G.
Author_Institution :
Walter-Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
Volume :
41
Issue :
9
fYear :
2005
fDate :
4/28/2005 12:00:00 AM
Firstpage :
529
Lastpage :
531
Abstract :
Injectorless quantum-cascade (QC) lasers, for the first time comparable to conventional QC lasers, are presented. The samples are based on InP and the active region is designed as a four-level staircase, realised in the strain-compensated material system Ga0.4In0.6As/Al0.56In0.44As. Low threshold current densities and a maximum operating temperature of 350 K have been achieved, due to an optimised design. At 77 K the wavelength is about 10 μm, while threshold current densities of 0.9 kA/cm2 have been observed, which compare well with those of conventional QC lasers in this wavelength region.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum cascade lasers; 350 K; 77 K; Ga0.4In0.6As-Al0.56In0.44As; InP; current densities; injectorless quantum-cascade lasers; strain-compensated material system;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20050540
Filename :
1426565
Link To Document :
بازگشت