Title :
Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate
Author :
Balakrishnan, G. ; Huang, S.H. ; Khoshakhlagh, A. ; Hill, P. ; Amtout, A. ; Krishna, S. ; Donati, G.P. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fDate :
4/28/2005 12:00:00 AM
Abstract :
Room-temperature optically-pumped In0.2Ga0.8Sb quantum well lasers on Si are reported. The defect-free monolithic epistructure growth on a Si(100) substrate is initiated by an AlSb quantum dot nucleation layer followed by an AlSb/GaSb superlattice. The 13% mismatch between the AlSb and Si lattice is accommodated by misfit dislocations and associated crystallographic undulations in the AlSb buffer. The nucleation layer and buffer are characterised by atomic force microscopy and transmission electron microscopy. The lasing spectrum is characterised as a function of pump power and polarisation analysis.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium compounds; indium compounds; nucleation; optical pumping; quantum well lasers; semiconductor quantum dots; semiconductor superlattices; silicon; transmission electron microscopy; AlSb buffer; AlSb quantum dot nucleation layer; AlSb-GaSb; AlSb-GaSb superlattice; In0.2Ga0.8Sb; InGaSb quantum well laser; Si; Si (100) substrate; atomic force microscopy; crystallographic undulation; defect-free monolithic epistructure growth; lasing spectrum; misfit dislocation; optical pumping; polarisation analysis; pump power; room temperature; transmission electron microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050564
