Title :
Reliability of planar InP-InGaAs avalanche photodiodes with recess etching
Author :
Jung, Jihoun ; Kwon, Yong Hwan ; Hyun, Kyung Sook ; Yun, Ilgu
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; etching; gallium arsenide; indium compounds; life testing; optical receivers; optical testing; semiconductor device reliability; semiconductor device testing; 10 Gbit/s; InP-InGaAs; accelerated life tests; activation energy; breakdown voltage; dark current monitoring; degradation mechanism; device median lifetime; optical receiver; planar InP-InGaAs avalanche photodiode reliability; recess etching; Avalanche photodiodes; Dark current; Degradation; Etching; Failure analysis; Life estimation; Life testing; Lifetime estimation; Monitoring; Optical receivers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1022004
