DocumentCode
796158
Title
Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
Author
Kim, C.-Y. ; Cha, J.-H. ; Kim, J. ; Kwon, Y.-S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Volume
41
Issue
9
fYear
2005
fDate
4/28/2005 12:00:00 AM
Firstpage
557
Lastpage
559
Abstract
The InP/InGaAsP double heterojunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; solar cells; 1.12 eV; InP-InGaAsP-InP; InP/InGaAsP/InP double hetero-junction solar cells; absorption layer; short-circuit current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20050005
Filename
1426583
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