DocumentCode :
796158
Title :
Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
Author :
Kim, C.-Y. ; Cha, J.-H. ; Kim, J. ; Kwon, Y.-S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Volume :
41
Issue :
9
fYear :
2005
fDate :
4/28/2005 12:00:00 AM
Firstpage :
557
Lastpage :
559
Abstract :
The InP/InGaAsP double heterojunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; 1.12 eV; InP-InGaAsP-InP; InP/InGaAsP/InP double hetero-junction solar cells; absorption layer; short-circuit current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20050005
Filename :
1426583
Link To Document :
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