Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

Author

Jin, N. ; Chung, S.-Y. ; Berger, P.R. ; Yu, R. ; Thompson, P.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

Volume

41

Issue

9

fYear

2005

fDate

4/28/2005 12:00:00 AM

Firstpage

559

Lastpage

560

Abstract

The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density ( J_p) of 22 kA/cm² with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (f_r0) of 2.4 GHz was obtained by biasing the diode at 320 mV. Increasing temperature slightly degrades the PVCR and f_r0. At 150°C, the PVCR and f_r0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.

Keywords

Ge-Si alloys; elemental semiconductors; microwave diodes; resonant tunnelling diodes; silicon; 1.8 GHz; 1.9 GHz; 2.4 GHz; 20 to 150 C; DC performance; RF performance; RITD; Si-SiGe; high power microwave applications; low temperature molecular beam epitaxy; maximum resistive cutoff frequency; peak current density; peak-to-valley current ratio; resonant interband tunnelling diodes; temperature dependence;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20050020

Filename

1426584